JPS60201632A - ドライエツチング装置 - Google Patents

ドライエツチング装置

Info

Publication number
JPS60201632A
JPS60201632A JP59058602A JP5860284A JPS60201632A JP S60201632 A JPS60201632 A JP S60201632A JP 59058602 A JP59058602 A JP 59058602A JP 5860284 A JP5860284 A JP 5860284A JP S60201632 A JPS60201632 A JP S60201632A
Authority
JP
Japan
Prior art keywords
wafer
ring
dry etching
etchant
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59058602A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0523053B2 (en]
Inventor
Etsuo Wani
和仁　悦夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp, Anelva Corp filed Critical Canon Anelva Corp
Priority to JP59058602A priority Critical patent/JPS60201632A/ja
Publication of JPS60201632A publication Critical patent/JPS60201632A/ja
Publication of JPH0523053B2 publication Critical patent/JPH0523053B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP59058602A 1984-03-27 1984-03-27 ドライエツチング装置 Granted JPS60201632A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59058602A JPS60201632A (ja) 1984-03-27 1984-03-27 ドライエツチング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59058602A JPS60201632A (ja) 1984-03-27 1984-03-27 ドライエツチング装置

Publications (2)

Publication Number Publication Date
JPS60201632A true JPS60201632A (ja) 1985-10-12
JPH0523053B2 JPH0523053B2 (en]) 1993-03-31

Family

ID=13089059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59058602A Granted JPS60201632A (ja) 1984-03-27 1984-03-27 ドライエツチング装置

Country Status (1)

Country Link
JP (1) JPS60201632A (en])

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6247130A (ja) * 1985-08-27 1987-02-28 Kokusai Electric Co Ltd 反応性イオンエツチング装置
JPS62108527A (ja) * 1985-11-06 1987-05-19 Anelva Corp ドライエツチング装置
JPH01124218A (ja) * 1987-11-09 1989-05-17 Fujitsu Ltd マスク基板のドライエッチング方法
US4968374A (en) * 1988-06-09 1990-11-06 Anelva Corporation Plasma etching apparatus with dielectrically isolated electrodes
US6217785B1 (en) 1992-12-01 2001-04-17 Applied Materials, Inc. Scavenging fluorine in a planar inductively coupled plasma reactor
US6899785B2 (en) * 2001-11-05 2005-05-31 International Business Machines Corporation Method of stabilizing oxide etch and chamber performance using seasoning

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5533090A (en) * 1979-07-19 1980-03-08 Anelva Corp Etching method
JPS5555530A (en) * 1978-10-18 1980-04-23 Takuo Sugano Electrode device for plasma processor
JPS5582438A (en) * 1978-12-15 1980-06-21 Nec Corp Plasma etching device
JPS5595327A (en) * 1979-01-16 1980-07-19 Hitachi Ltd Reactive sputter-etching
JPS55154582A (en) * 1979-05-21 1980-12-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Gas plasma etching method
JPS57185982A (en) * 1981-05-06 1982-11-16 Perkin Elmer Corp Plasma etching device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5555530A (en) * 1978-10-18 1980-04-23 Takuo Sugano Electrode device for plasma processor
JPS5582438A (en) * 1978-12-15 1980-06-21 Nec Corp Plasma etching device
JPS5595327A (en) * 1979-01-16 1980-07-19 Hitachi Ltd Reactive sputter-etching
JPS55154582A (en) * 1979-05-21 1980-12-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Gas plasma etching method
JPS5533090A (en) * 1979-07-19 1980-03-08 Anelva Corp Etching method
JPS57185982A (en) * 1981-05-06 1982-11-16 Perkin Elmer Corp Plasma etching device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6247130A (ja) * 1985-08-27 1987-02-28 Kokusai Electric Co Ltd 反応性イオンエツチング装置
JPS62108527A (ja) * 1985-11-06 1987-05-19 Anelva Corp ドライエツチング装置
JPH01124218A (ja) * 1987-11-09 1989-05-17 Fujitsu Ltd マスク基板のドライエッチング方法
US4968374A (en) * 1988-06-09 1990-11-06 Anelva Corporation Plasma etching apparatus with dielectrically isolated electrodes
US6217785B1 (en) 1992-12-01 2001-04-17 Applied Materials, Inc. Scavenging fluorine in a planar inductively coupled plasma reactor
US6899785B2 (en) * 2001-11-05 2005-05-31 International Business Machines Corporation Method of stabilizing oxide etch and chamber performance using seasoning

Also Published As

Publication number Publication date
JPH0523053B2 (en]) 1993-03-31

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term